Theoretical analysis of visible InGaAsP laser diodes.

Wavelength dependence of TO in InGaAsP semiconductor laser diodes

The temperature sensitivity of laser threshold current in single mode, wavelength tunable, InGaAsP bulk active region semiconductor lasers diodes is measured in the temperature range, 293 K 6 T 6 355 K and wavelength range 1.23 pm il < <, 1.35 pm. When proper account is taken of peak gain variation with temperature, the temperature dependence of laser threshold current (parameterized by T,) is ...

High speed visible light communication using blue GaN laser diodes

GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmis...

Investigation of High-Speed Transient Processes and Parameter Extraction of InGaAsP Laser Diodes

Investigation of InGaAsP/InP DFB and FP Laser Diodes Noise Characteristic

In the paper, there are presented comprehensive noise characteristics (electrical and optical noise and correlation between electrical and optical fluctuations) investigations that were performed with the aim to clear up the reasons of short lifetime of laser diode (LD) and to find out LD design and fabrication features that can increase laser diode quality. Groups of different quality InGaAsP ...

Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...